1/9 may 2001 STB3NC90Z n-channel 900v - 3.2 w - 3.5a d 2 pak zener-protected powermesh ? iii mosfet (1)i sd 3.5a, di/dt 100a/ m s, v dd v (br)dss ,t j t jmax (*) . limited only by maximum temperature allowed n typical r ds (on) = 3.2 w n extremely high dv/dt and capability gate to - source zener diodes n 100% avalanche tested n very low gate input resistance n gate charge minimized description the third generation of mesh overlay ? power mosfets for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back zener diodes between gate and source. such ar- rangement gives extra esd capability with higher rug- gedness performance as requested by a large variety of single-switch applications. applications n single-ended smps in monitors, computer and industrial application n welding equipment absolute maximum ratings ( ? )pulse width limited by safe operating area type v dss r ds(on) i d stb3nc90 900v < 3.5 w 3.5 a symbol parameter value unit v ds drain-source voltage (v gs =0) 900 v v dgr drain-gate voltage (r gs =20k w ) 900 v v gs gate- source voltage 25 v i d drain current (continuos) at t c =25 c 3.5 a i d drain current (continuos) at t c = 100 c 2.2 a i dm ( l ) drain current (pulsed) 14 a p tot total dissipation at t c =25 c 100 w derating factor 0.8 w/ c i gs gate-source current (*) 50 ma v esd(g-s) gate source esd(hbm-c=100pf, r=15k w) 2.5 kv dv/dt peak diode recovery voltage slope 3 v/ns t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c d 2 pak 1 3
STB3NC90Z 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 1.25 c/w rthj-amb thermal resistance junction-ambient max 62 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 3.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 220 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs = 0 900 v d bv dss / d t j breakdown voltage temp. coefficient i d =1ma,v gs =0 1 v/ c i dss zero gate voltage drain current (v gs =0) v ds = max rating 1 m a v ds = max rating, t c = 125 c 50 m a i gss gate-body leakage current (v ds =0) v gs = 20v 10 m a symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 m a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 1.75 a 3.2 3.5 w i d(on) on state drain current v ds >i d(on) xr ds(on)max, v gs =10v 3.5 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 1.75a 3s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 1250 pf c oss output capacitance 78 pf c rss reverse transfer capacitance 7pf
3/9 STB3NC90Z electrical characteristics (continued) switching on switching off source drain diode gate-source zener diode note: 1. pulsed: pulse duration = 300 m s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. d v bv = a t(25 -t) bv gso (25 ) protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device's esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the 25v zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 450 v, i d = 1.5 a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 28 ns t r 14 ns q g total gate charge v dd = 720v, i d = 3a, v gs = 10v 27 38 nc q gs gate-source charge 8 nc q gd gate-drain charge 10 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 720v, i d =3a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 16 ns t f fall time 10 ns t c cross-over time 18 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 3.5 a i sdm (2) source-drain current (pulsed) 14 a v sd (1) forward on voltage i sd = 3 a, v gs =0 1.6 v t rr reverse recovery time i sd = 3 a, di/dt = 100a/ m s, v dd = 100v, t j = 150 c (see test circuit, figure 5) 712 ns q rr reverse recovery charge 4450 m c i rrm reverse recovery current 13 a symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 25 v a t voltage thermal coefficient t=25 c note(3) 1.3 10 -4 / c rz dynamic resistance i d =50ma 90 w
STB3NC90Z 4/9 safe operating area thermal impedance output characteristics transfer characteristics static drain-source on resistance transconductance
5/9 STB3NC90Z normalized gate threshold voltage vs temp. normalized on resistance vs temperature gate charge vs gate-source voltage capacitance variations source-drain diode forward characteristics
STB3NC90Z 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STB3NC90Z 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0? 8? d 2 pak mechanical data 3
STB3NC90Z 8/9 tape and reel shipment (suffix ot4o)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
9/9 STB3NC90Z information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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